منابع مشابه
Stacking Faults in Ca(OH)2 Produced by Vapour Phase Hydration
The diffraction profiles of a thin single crystal with stacking faults were calculated with the theory of diffraction of a one-dimensionally disordered crystal (Kakinoki, Komura, Allegra) by including the effect of crystallite thickness. The results hold for generalized close packed structures. An application to calcium hydroxide is discussed: the stacking faults significantly contribute to the...
متن کاملStacking faults and partial dislocations in graphene
We investigate two mechanisms of crystallographic slip in graphene, corresponding to glide and shuffle generalized stacking faults (GSF), and compute their -curves using Sandia National Laboratories Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS). We find evidence of metastable partial dislocations for the glide GSF only. The computed values of the stable and unstable stackin...
متن کاملStacking Faults in Co-Alloy Longitudinal Media
Stacking faults in CoCrTa/Cr, CoCrPt/NiAl, and CoCrPt/Cr/NiAl films have been studied by electron diffraction. Interfacial lattice match and epitaxial growth play important roles in reducing the stacking fault density. It is found that the bicrystal media has large stacking fault densities. In the unicrystal media case, when good epitaxy between magnetic layer and underlayer cannot be achieved,...
متن کاملGrain-boundary dissociation by the emission of stacking faults.
A range of ^110& symmetric tilt grain boundaries ~GB’s! are investigated in several fcc metals with simulations and high-resolution electron microscopy. Boundaries with tilt angles between 50.5° and 109.5° dissociate into two boundaries 0.6 to 1.1 nm apart. The dissociation takes place by the emission of stacking faults from one boundary that are terminated by Shockley partials at a second boun...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Zeitschrift für Naturforschung A
سال: 1985
ISSN: 1865-7109,0932-0784
DOI: 10.1515/zna-1985-0113